| PART |
Description |
Maker |
| FGW40N120VD |
Discrete IGBT (High-Speed V series) 1200V / 40A
|
Fuji Electric
|
| FGW40N120HD |
Discrete IGBT (High-Speed V series) 1200V / 40A
|
Fuji Electric
|
| HGT1S20N60B3S HGTG20N60B3 HGTP20N60B3 FN3723 |
40A/ 600V/ UFS Series N-Channel IGBTs
40A, 600V, UFS Series N-Channel IGBTs
From old datasheet system
XC9536-6VQ44C - NOT RECOMMENDED for NEW DESIGN
40 A, 600 V, N-CHANNEL IGBT
|
http://
FAIRCHILD[Fairchild Semiconductor]
INTERSIL[Intersil Corporation]
Fairchild Semiconductor Corporation
|
| FGH40N60SMF085 |
600V, 40A Field Stop IGBT
|
Fairchild Semiconductor
|
| RGCL80TK60 RGCL80TK60GC11 |
600V 40A Field Stop Trench IGBT
|
ROHM
|
| RGCL80TS60C11 |
600V 40A Field Stop Trench IGBT
|
ROHM
|
| IRG4BC30S-S IRG4BC30SS IRG4BC30S-STRL IRG4BC30S-ST |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 18A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 18A条一（c）|63AB
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) 绝缘栅双极晶体管IGBT的标准速度（VCES和\u003d 600V电压的Vce（on）典\u003d.4V，@和VGE \u003d 15V的，集成电路\u003d 18A条）
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V Vce(on)typ.=1.4V @Vge=15V Ic=18A)
600V DC-1 kHz (Standard) Discrete IGBT in a D2-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| STGW30NC60VD GW30NC60VD |
N-channel 40A - 600V - TO-247 Very fast switching PowerMESH TM IGBT N沟道40A 600V47非常快速IGBT的开关PowerMESH商标
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| FGW75N60HD |
Discrete IGBT (High-Speed V series) 600V / 75A
|
Fuji Electric
|
| STE40NC60 |
N-CHANNEL 600V 0.098 OHM 40A ISOTOP POWERMESH II POWER MOSFET
N-CHANNEL 600V - 0.098ohm - 40A ISOTOP PowerMesh⑩II MOSFET
N-CHANNEL 600V - 0.098ohm - 40A ISOTOP PowerMesh?II MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
